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this is preliminary information on a new product now in dev elopment or undergoing evaluati on. details are subject to change without notice. march 2013 docid024411 rev 1 1/13 13 STGW50HF65SD stgwt50hf65sd 60 a, 650 v, very low drop igbt with soft and fast recovery diode datasheet - preliminary data figure 1. internal schematic diagram features ? very low on-state voltage drop ? low switching off ? high current capability ? very soft ultrafast reco very antiparallel diode applications ? pv inverter ? ups description the very low drop igbt is developed using an advanced planar technology, resulting in a device with extremely low on-sta te voltage and limited turn-off losses. the overall performance of this igbt makes it ideal for lo w frequency switches in mixed-frequency topologies for power factors ? ? 1. to-247 to-3p 1 2 3 1 2 3 table 1. device summary order code marking package packaging STGW50HF65SD gw50hf65sd to-247 tube stgwt50hf65sd gw50hf65sd to-3p tube www.st.com
electrical ratings STGW50HF65SD, stgwt50hf65sd 2/13 docid024411 rev 1 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ce = 0) 650 v i c (1) 1. calculated according to the iterative formula: continuous collector current at t c = 25 c 110 a i c (1) continuous collector current at t c = 100 c 60 a i cl (2) 2. vclamp = 80% of v ces , t j =150 c, r g =10 ? , v ge =15 v turn-off latching current 60 a i cp (3) 3. pulse width limited by maximum junction temperature and turn-off within rbsoa pulsed collector current 130 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 284 w i f diode rms forward current at t c = 25 c 30 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 120 a t j operating junction temper ature - 55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case igbt 0.44 c/w r thj-case thermal resistance junction-case diode 1.25 c/w r thj-amb thermal resistance junction-ambient 50 c/w i c t c ?? t jmax ?? t c ? r thj c ? v ce sat ?? max ?? t jmax ?? i c t c ?? ? ?? ? ------------------------------------------------------------------------------------------------------- =
docid024411 rev 1 3/13 STGW50HF65SD, stgwt50hf65sd electrical characteristics 2 electrical characteristics t j = 25c unless othe rwise specified table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 650 v v ce(sat) collector-emitte r saturation voltage v ge = 15 v, i c = 30 a v ge = 15 v, i c = 30 a, t j = 125 c 1.15 1.05 1.45 v v v ge(th) gate thresh old voltage v ce = v ge , i c = 250 a 3.5 5.7 v i ces collector cut-off current (v ge = 0) v ce = 650 v v ce = 650 v, t j = 125 c 50 500 a a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na g fs forward transconductance v ce = 15 v , i c = 30 a 25 s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 4300 400 100 - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v, i c = 30 a,v ge = 15 v - 200 27 90 - nc nc nc
electrical characteristics stg w50hf65sd, stgwt50hf65sd 4/13 docid024411 rev 1 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 400 v, i c = 30 a r g = 10 ? , v ge = 15 v, (see figure 14 ) - 50 20 1280 - ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 400 v, i c = 30 a r g = 10 ? , v ge = 15 v, t j = 125 c (see figure 14 ) - 47 22 1100 - ns ns a/s t r( v off) t d(off) t f off voltage rise time turn-off delay time current fall time v cc = 400 v, i c = 30 a r g = 10 ? , v ge = 15 v, (see figure 14 ) - 370 220 465 - ns ns ns t r( v off) t d(off) t f off voltage rise time turn-off delay time current fall time v cc = 400 v, i c = 30 a r g = 10 ? , v ge = 15 v, t j = 125 c (see figure 14 ) - 700 250 800 - ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on (1) e off (2) e ts 1. eon is the turn-on losses when a typica l diode is used in the test circuit in figure 14 . if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts and diode are at the same temperature (25c and 125c). 2. turn-off losses include also th e tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v cc = 400 v, i c = 30 a r g = 10 ? , v ge = 15 v, (see figure 14 ) - 0.25 4.2 4.45 - mj mj mj e on (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 400 v, i c = 30 a r g = 10 ? , v ge = 15 v, t j = 125 c (see figure 14 ) - 0.45 7.8 8.25 - mj mj mj table 8. collector-emitter diode symbol parameter test cond itions min. typ. max. unit v f forward on-voltage i f = 30 a i f = 30 a, t j = 125 c - 2.8 1.8 - v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a, v r = 50 v, di/dt = 100 a/s (see figure 17 ) - 67 140 4 - ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a, v r = 50 v, t j = 125 c, di/dt = 100 a/s (see figure 17 ) - 103 390 7 - ns nc a
docid024411 rev 1 5/13 STGW50HF65SD, stgwt50hf65sd electrical characteristics 2.1 electrical characteri stics (curves) figure 2. output characteristics fi gure 3. transfer characteristics figure 4. collector-emitter on voltage vs temperature figure 5. collector-emitter on voltage vs collector current figure 6. breakdown voltage vs temperature figure 7. gate threshold voltage vs temperature i c 60 40 20 0 0 2 v ce (v) (a) 1 3 80 100 v ge =15v 120 v ge =11v v ge =10v v ge =8v am0922v1 i c 60 40 20 0 0 4 v ge (v) 8 (a) 2 6 10 80 100 120 v ce =10v am09222v1 v ce(sat) 1.1 1.0 0.9 0.8 -50 50 t j (c) (v) 0 100 1.2 i c =60a 1.3 1.4 1.5 i c =30a i c =15a v ge =15v am08877v1 v ce(sat) 1.1 0.9 0.7 0.5 0 40 i c (a) (v) 20 60 1.3 t j =25c t j =125c t j =-50c 80 1.5 1.7 v ge =15v am08878v1 v (br)ces -50 0 t j (c) (v) 50 100 0.90 0.95 1.00 1.05 1.10 i c = 1 ma am08879v1 v ge(th) 0.9 0.8 0.7 0.6 -50 0 t j (c) (norm) 1.0 50 100 1.1 v ge =v ce i c =250a am08880v1
electrical characteristics stg w50hf65sd, stgwt50hf65sd 6/13 docid024411 rev 1 figure 8. gate charge vs gate-emitter voltage figure 9. capacitance variations figure 10. switching losses vs collector current figure 11. switching losses vs gate resistance figure 12. switching losses vs temperature figure 13. emitter-collector diode characteristics v ge 12 8 4 0 0 40 q g (nc) (v) 160 16 80 120 v cc =480v i c =30a 200 am08881v1 c 1000 100 10 0.1 10 v ce (v) (pf) 1 100 cies coes cres f=1mhz v ge =0 am08882v1 e 100 5 15 i c (a) (j) 10 20 1000 e on e off 25 v cc =400v, r g =10 v ge =15v, t j =125c am08883v1 e 100 0 40 r g ( ) (j) 20 60 1000 e on e off 80 v cc =400v, i c =30a v ge =15v, t j =125c am08884v1 e 100 25 75 t j (c) (j) 50 100 1000 e on e off v cc =400v, i c =30a v ge =15v, r g =10 am08885v1 i f 30 20 10 0 0 2 v f (v) (a) 1 3 t j =25c 4 typical values typical values t j =125c t j =125c maximum values am08887v1
docid024411 rev 1 7/13 STGW50HF65SD, stgwt50hf65sd test circuits 3 test circuits figure 14. test circuit for inductive load switching figure 15. gate charge test circuit figure 16. switching waveform figure 17. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data STGW50HF65SD, stgwt50hf65sd 8/13 docid024411 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark. table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid024411 rev 1 9/13 STGW50HF65SD, stgwt50hf65sd package mechanical data figure 18. to-247 drawing 0075325_g
package mechanical data STGW50HF65SD, stgwt50hf65sd 10/13 docid024411 rev 1 table 10. to-3p mechanical data dim mm. min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b0.8011.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
docid024411 rev 1 11/13 STGW50HF65SD, stgwt50hf65sd package mechanical data figure 19. to-3p drawing 8045950_a
revision history STGW50HF65SD, stgwt50hf65sd 12/13 docid024411 rev 1 5 revision history table 11. document revision history date revision changes 21-mar-2013 1 initial release.
docid024411 rev 1 13/13 STGW50HF65SD, stgwt50hf65sd please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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